Title :
A novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs
Author :
Yoshida, T. ; Ohtomo, Y. ; Shimaya, M.
Author_Institution :
NTT Syst. Electron. Lab., Atsugi, Japan
Abstract :
We describe a novel p-i-n photodetector fabricated on separation by implanted oxygen (SIMOX) substrate using a fully-depleted CMOS/SIMOX process, which is suitable for CMOS optoelectronic integrated circuits (OEICs). The photodetector/SIMOX exhibits a low parasitic capacitance of 0.2 pF, a high responsivity of 0.4 A/W at 850 nm, and a high photoresponse for 1 GHz operation at a supply voltage of 2.0 V.
Keywords :
CMOS integrated circuits; SIMOX; capacitance; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 1 GHz; 2 V; 2 pF; 850 nm; CMOS OEICs; PIN photodetector; SIMOX substrate; Si; fully-depleted CMOS/SIMOX process; high photoresponse; high responsivity; low parasitic capacitance; optoelectronic integrated circuits; p-i-n photodetector; CMOS process; High speed optical techniques; Optical devices; Optical receivers; Optoelectronic devices; PIN photodiodes; Parasitic capacitance; Photodetectors; Stimulated emission; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746239
