A novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs

Author

Yoshida, T. ; Ohtomo, Y. ; Shimaya, M.

Author_Institution

NTT Syst. Electron. Lab., Atsugi, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

29

Lastpage

32

Abstract

We describe a novel p-i-n photodetector fabricated on separation by implanted oxygen (SIMOX) substrate using a fully-depleted CMOS/SIMOX process, which is suitable for CMOS optoelectronic integrated circuits (OEICs). The photodetector/SIMOX exhibits a low parasitic capacitance of 0.2 pF, a high responsivity of 0.4 A/W at 850 nm, and a high photoresponse for 1 GHz operation at a supply voltage of 2.0 V.

Keywords

CMOS integrated circuits; SIMOX; capacitance; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 1 GHz; 2 V; 2 pF; 850 nm; CMOS OEICs; PIN photodetector; SIMOX substrate; Si; fully-depleted CMOS/SIMOX process; high photoresponse; high responsivity; low parasitic capacitance; optoelectronic integrated circuits; p-i-n photodetector; CMOS process; High speed optical techniques; Optical devices; Optical receivers; Optoelectronic devices; PIN photodiodes; Parasitic capacitance; Photodetectors; Stimulated emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746239

Filename

746239