DocumentCode
2571922
Title
Investigations on phosphosilicate glass by using IR, AFM and cluster model calculation
Author
Bercu, M. ; Moldovan, C. ; Gavrila, R. ; Bercu, B.N. ; Ligor, O.
Author_Institution
Fac. of Phys., Bucharest Univ., Romania
Volume
2
fYear
2002
fDate
2002
Firstpage
279
Abstract
Many applications of phosphosilicate glass (PSG) in microtechnology and in micro-machining, require the control of phosphorous content. This study is based mainly on optical spectroscopy and quantum calculations. It focuses on P=O bond formation and the corresponding changes of the chemical oxide structure. The characterisation of CVD thin films deposited on c-Si has been related to the dependence between the partial pressure of PH3 and the incorporated content of phosphorous in PSG films by means of IR spectroscopy. AFM indicated spongeous structure formation for aged samples, as a result of water absorption which leads to hydrolysis of P=O and O-SiO3 bonds. The cluster model approach based on the LCAO Hartree Fock theory was used to calculate the vibration modes for the proposed surrounding of P=O and O-P-O groups by using specific atomic cluster models. This contribution deals with some links between the chemical structures of the nearest environment of phosphorous atoms in PSG films and the features shown by IR spectra.
Keywords
CVD coatings; HF calculations; LCAO calculations; atomic clusters; atomic force microscopy; bonds (chemical); infrared spectra; phosphosilicate glasses; porosity; vibrational modes; AFM; IR spectra; IR spectroscopy; LCAO Hartree Fock theory; O-P-O groups; O-SiO3 bonds; OH-SiO3; P-OH; P2O5-SiO2; P2O5-SiO2-Si; P2O5; P=O bond formation; P=O bond hydrolysis; PH3; PH3 partial pressure; PSG; PSG films; PSG incorporated phosphorous content control; PSG-Si; aged sample spongeous structure formation; c-Si deposited CVD thin films; chemical oxide structure; cluster model calculations; micromachining; microtechnology; optical spectroscopy; phosphosilicate glass; quantum calculations; specific atomic cluster models; vibration modes; water absorption; Bonding; Chemical analysis; Chemical vapor deposition; Glass; Infrared spectra; Optical films; Semiconductor films; Silicon; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105849
Filename
1105849
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