Title :
Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors
Author :
Tanabe, A. ; Kudoh, Y. ; Kawakami, Y. ; Masubuchi, K. ; Kawai, S. ; Yamada, T. ; Morimoto, M. ; Arai, K. ; Hatano, K. ; Furumiya, M. ; Nakashiba, Y. ; Mutoh, N. ; Orihara, K. ; Teranishi, H.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order to improve dynamic range in small pixel interline-transfer CCD (IT-CCD) image sensors. The new technologies have been applied to a progressive-scan IT-CCD image sensor with 5 /spl mu/m square pixels and have (1) increased the charge handling capability of its V-CCDs to 4500 electrons/V; (2) improved its smear value to -95 dB; and (3) increased the saturation charge of its PDs to 2.3/spl times/10/sup 4/ electrons.
Keywords :
CCD image sensors; photodiodes; dynamic range; interline-transfer CCD; narrow channel effect; photodiode; progressive scan IT-CCD image sensor; saturation charge; smear; vertical CCD; Charge coupled devices; Dynamic range; Electrons; Image sensors; Knee; National electric code; Photodiodes; Pixel; Silicon; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746242
