DocumentCode
2571957
Title
A snap-shot CMOS active pixel imager for low-noise, high-speed imaging
Author
Guang Yang ; Yadid-Pecht, O. ; Wrigley, C. ; Pain, B.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
45
Lastpage
48
Abstract
Design and performance of a 128/spl times/128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 /spl mu/sec, exposure), with low noise (<5 e/sup -/), immeasurable image lag, and excellent blooming protection.
Keywords
CMOS image sensors; 128 pixel; 75 mus; blooming protection; clocking; image lag; low-noise high-speed imaging; pixel design; single-poly CMOS technology; snap-shot CMOS active pixel imager; CMOS process; CMOS technology; Charge transfer; Clocks; Image storage; Laboratories; Pain; Pixel; Propulsion; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746243
Filename
746243
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