Title :
A snap-shot CMOS active pixel imager for low-noise, high-speed imaging
Author :
Guang Yang ; Yadid-Pecht, O. ; Wrigley, C. ; Pain, B.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Design and performance of a 128/spl times/128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 /spl mu/sec, exposure), with low noise (<5 e/sup -/), immeasurable image lag, and excellent blooming protection.
Keywords :
CMOS image sensors; 128 pixel; 75 mus; blooming protection; clocking; image lag; low-noise high-speed imaging; pixel design; single-poly CMOS technology; snap-shot CMOS active pixel imager; CMOS process; CMOS technology; Charge transfer; Clocks; Image storage; Laboratories; Pain; Pixel; Propulsion; Protection;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746243
