Title :
Wide bandgap semiconductor power electronics
Author_Institution :
Mater. Res. & Strategic Technol., Motorola Inc., Tempe, AZ, USA
Abstract :
Wide bandgap semiconductors, SiC and GaN, have attracted increased attention because of their potential for higher performance switching and RF power devices. SiC Schottky diodes, MOSFET´s, SIT´s and MESFET´s and AlGaN/GaN HFET´s are described and their performance compared to that of Si and GaAs devices.
Keywords :
power semiconductor devices; wide band gap semiconductors; AlGaN-GaN; HFET; MESFET; MOSFET; RF device; SIT; Schottky diode; SiC; power electronics; switching; wide bandgap semiconductor; Aluminum gallium nitride; Gallium nitride; HEMTs; MESFETs; Power electronics; Power semiconductor switches; Radio frequency; Schottky diodes; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746244