Title :
MOS channel length modulation in weak inversion
Author :
Brezeanu, Mihai ; Rusu, Adrian ; Dobrescu, Lidia
Author_Institution :
Univ. of Bucharest, Romania
Abstract :
This paper is concerned with the investigation of MOSFETs in weak inversion. A new model is proposed for the transistor operating in the saturation zone. In order to validate the model, measurements on several transistors were carried out, which proved good agreement with the experimental model.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; MOS channel length modulation; MOSFET weak inversion; saturation zone transistor operation; weak inversion/saturation MOS transistor drain current model; CMOS technology; Charge measurement; Current measurement; Equations; MOSFET circuits; Power system modeling; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; Wireless communication;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105854
