Title :
Low-temperature oxidation of hydrogen plasma cleaned crystalline silicon
Author :
Szekeres, A. ; Alexandrova, S.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
Low-temperature thermal oxidation (850°C) of hydrogen plasma cleaned crystalline silicon in thin film regime is studied and is compared with that of standard RCA cleaned Si. The results show that silicon hydrogenation temperature plays an important role for the oxidation rates and the quality of the formed Si/SiO2 structures. Correlation between the kinetics constants and the oxide and interface parameters is established.
Keywords :
elemental semiconductors; hydrogenation; oxidation; plasma materials processing; reaction kinetics; semiconductor technology; semiconductor thin films; silicon; surface cleaning; 850 degC; H; RCA cleaned Si; Si-SiO2; crystalline silicon thin films; formed Si/SiO2 structure quality; hydrogen plasma cleaned crystalline silicon; kinetics constants; low-temperature thermal oxidation; oxidation rates; oxide/interface parameters; silicon hydrogenation temperature; Atom optics; Cleaning; Crystallization; Hydrogen; Kinetic theory; Optical films; Optical refraction; Oxidation; Plasma temperature; Silicon;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105864
