• DocumentCode
    2572185
  • Title

    Low-temperature oxidation of hydrogen plasma cleaned crystalline silicon

  • Author

    Szekeres, A. ; Alexandrova, S.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    343
  • Abstract
    Low-temperature thermal oxidation (850°C) of hydrogen plasma cleaned crystalline silicon in thin film regime is studied and is compared with that of standard RCA cleaned Si. The results show that silicon hydrogenation temperature plays an important role for the oxidation rates and the quality of the formed Si/SiO2 structures. Correlation between the kinetics constants and the oxide and interface parameters is established.
  • Keywords
    elemental semiconductors; hydrogenation; oxidation; plasma materials processing; reaction kinetics; semiconductor technology; semiconductor thin films; silicon; surface cleaning; 850 degC; H; RCA cleaned Si; Si-SiO2; crystalline silicon thin films; formed Si/SiO2 structure quality; hydrogen plasma cleaned crystalline silicon; kinetics constants; low-temperature thermal oxidation; oxidation rates; oxide/interface parameters; silicon hydrogenation temperature; Atom optics; Cleaning; Crystallization; Hydrogen; Kinetic theory; Optical films; Optical refraction; Oxidation; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2002. CAS 2002 Proceedings. International
  • Print_ISBN
    0-7803-7440-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2002.1105864
  • Filename
    1105864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2572185