Title :
Status of single-electron memories
Author :
Yano, K. ; Ishii, T. ; Sano, T. ; Mine, T. ; Murai, F. ; Kure, T. ; Seki, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
This paper reviews the status of single-electron memories. First, one-transistor single-electron memory, which has been the basis of the recent rapid development in this field is reviewed. Next, technologies used in recent 128-Mb large scale integration demonstration are discussed. Finally, future challenges and remaining issues are discussed.
Keywords :
field effect memory circuits; large scale integration; single electron transistors; 128 Mbit; large scale integration; memory ICs; one-transistor single-electron devices; single-electron memories; CMOS technology; Circuits; FETs; Nanoscale devices; Prototypes; Semiconductor films; Silicon; Single electron memory; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746290
