DocumentCode
2572238
Title
Status of single-electron memories
Author
Yano, K. ; Ishii, T. ; Sano, T. ; Mine, T. ; Murai, F. ; Kure, T. ; Seki, K.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
107
Lastpage
110
Abstract
This paper reviews the status of single-electron memories. First, one-transistor single-electron memory, which has been the basis of the recent rapid development in this field is reviewed. Next, technologies used in recent 128-Mb large scale integration demonstration are discussed. Finally, future challenges and remaining issues are discussed.
Keywords
field effect memory circuits; large scale integration; single electron transistors; 128 Mbit; large scale integration; memory ICs; one-transistor single-electron devices; single-electron memories; CMOS technology; Circuits; FETs; Nanoscale devices; Prototypes; Semiconductor films; Silicon; Single electron memory; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746290
Filename
746290
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