Title :
Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics
Author :
Ilgweon Kim ; Sangyeon Han ; Hyungsik Kim ; Jongho Lee ; Bumho Choi ; SungWoo Hwang ; Doyeol Ahn ; Hyungcheol Shin
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
Keywords :
EPROM; MOS memory circuits; dielectric thin films; elemental semiconductors; semiconductor quantum dots; silicon; single electron transistors; tunnelling; EEPROM; Si; oxide-nitride tunneling dielectrics; quantum dot memory; repeatable process; room temperature single electron effects; Dielectric substrates; EPROM; Electrons; Quantum dots; Rough surfaces; Semiconductor films; Surface roughness; Temperature; Tunneling; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746291
