• DocumentCode
    2572250
  • Title

    Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

  • Author

    Ilgweon Kim ; Sangyeon Han ; Hyungsik Kim ; Jongho Lee ; Bumho Choi ; SungWoo Hwang ; Doyeol Ahn ; Hyungcheol Shin

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
  • fYear
    1998
  • fDate
    6-9 Dec. 1998
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated an EEPROM which showed room temperature single electron effects. This proved the feasibility of practical Si quantum dot memory with ON film.
  • Keywords
    EPROM; MOS memory circuits; dielectric thin films; elemental semiconductors; semiconductor quantum dots; silicon; single electron transistors; tunnelling; EEPROM; Si; oxide-nitride tunneling dielectrics; quantum dot memory; repeatable process; room temperature single electron effects; Dielectric substrates; EPROM; Electrons; Quantum dots; Rough surfaces; Semiconductor films; Surface roughness; Temperature; Tunneling; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4774-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1998.746291
  • Filename
    746291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2572250