Title :
Evaluation of visible and near-IR lasers diodes subjected to electron and gamma-ray irradiation
Author :
Sporea, Dan G. ; Florean, A. ; Oproiu, Constantin ; Constantinescu, Bogdan
Author_Institution :
Nat. Inst. for Lasers, Plasma & Radiat. Phys., Magurele, Romania
Abstract :
This paper reports our research on semiconductor laser electric and opto-electronic characteristics change, as they are subjected to electron and gamma-ray irradiation. Laser diodes, working in the visible (635 nm-670 nm) and near-IR (780 nm-850 nm) ranges, were investigated for different operating temperature and driving current regimes.
Keywords :
electron beam effects; gamma-ray effects; laser variables measurement; semiconductor device measurement; semiconductor device reliability; semiconductor lasers; 635 to 670 nm; 780 to 850 nm; electron irradiation; gamma-ray radiation; laser driving current; laser operating temperature; near-IR laser diodes; radiation induced changes; semiconductor laser electric/optoelectronic characteristics change; visible light laser diodes; Diode lasers; Electron beams; Laser theory; Optical attenuators; Optical control; Optical sensors; Power lasers; Power measurement; Semiconductor lasers; Temperature;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105868
