DocumentCode
2572299
Title
Evaluation of visible and near-IR lasers diodes subjected to electron and gamma-ray irradiation
Author
Sporea, Dan G. ; Florean, A. ; Oproiu, Constantin ; Constantinescu, Bogdan
Author_Institution
Nat. Inst. for Lasers, Plasma & Radiat. Phys., Magurele, Romania
Volume
2
fYear
2002
fDate
2002
Firstpage
359
Abstract
This paper reports our research on semiconductor laser electric and opto-electronic characteristics change, as they are subjected to electron and gamma-ray irradiation. Laser diodes, working in the visible (635 nm-670 nm) and near-IR (780 nm-850 nm) ranges, were investigated for different operating temperature and driving current regimes.
Keywords
electron beam effects; gamma-ray effects; laser variables measurement; semiconductor device measurement; semiconductor device reliability; semiconductor lasers; 635 to 670 nm; 780 to 850 nm; electron irradiation; gamma-ray radiation; laser driving current; laser operating temperature; near-IR laser diodes; radiation induced changes; semiconductor laser electric/optoelectronic characteristics change; visible light laser diodes; Diode lasers; Electron beams; Laser theory; Optical attenuators; Optical control; Optical sensors; Power lasers; Power measurement; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105868
Filename
1105868
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