Title :
A multi-gate single-electron transistor and its application to an exclusive-OR gate
Author :
Takahashi, Y. ; Fujiwara, A. ; Yamazaki, K. ; Namatsu, H. ; Kurihara, K. ; Murase, K.
Author_Institution :
NTT Basic Res. Labs., Atsugi, Japan
Abstract :
The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.
Keywords :
field effect logic circuits; large scale integration; logic gates; single electron transistors; 40 K; XOR operations; current switching; exclusive-OR gate; gate configurations; logic circuits; multi-gate single-electron transistor; CMOS logic circuits; Capacitance; Circuit testing; Energy consumption; Equivalent circuits; Laboratories; Logic circuits; Logic devices; Single electron transistors; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746296
