DocumentCode
2572449
Title
Trap-assisted tunneling in MOS structures with ultrathin SiO2
Author
Simeonov, S. ; Yurukov, I. ; Kafedjiiska, E. ; Szekeres, A.
Author_Institution
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Volume
2
fYear
2002
fDate
2002
Firstpage
399
Abstract
The conductivity in SiO2/p-Si structures with 13 nm thick SiO2, layer, subjected to hydrogen plasma at 300°C, was investigated. The I-V characteristics of these structures were measured in the accumulation regime under electric field in the range (2-7) × 106 V/cm at temperatures ranging 78-300 K. The obtained results suggest that the current through the oxide is carried out by inter-trap tunneling.
Keywords
MIS structures; accumulation layers; electrical conductivity; electron traps; elemental semiconductors; interface states; plasma materials processing; silicon; silicon compounds; tunnelling; 13 nm; 300 C; 78 to 300 K; I-V characteristics; MOS structures; SiO2-Si; SiO2/p-Si structures; accumulation regime; conductivity; current; electric field; hydrogen plasma; inter-trap tunneling; oxide; trap-assisted tunneling; ultrathin SiO2; Capacitance-voltage characteristics; Conductivity; Hydrogen; Plasma measurements; Plasma properties; Plasma temperature; Plasma transport processes; Temperature measurement; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105877
Filename
1105877
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