Title :
Local-field-enhancement model of DRAM retention failure
Author :
Hiraiwa, A. ; Ogasawara, M. ; Natsuaki, N. ; Itoh, Y. ; Iwai, H.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.
Keywords :
DRAM chips; failure analysis; integrated circuit modelling; integrated circuit reliability; space-charge-limited conduction; DRAM retention failure; electron traps; energy-level distribution; local-field-enhancement model; space-charge-region-field variation; tail component; DRAM chips; Electron devices; Electron traps; Guidelines; Leakage current; Power generation; Probability distribution; Random access memory; Tail; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746306
