DocumentCode
2572460
Title
Local-field-enhancement model of DRAM retention failure
Author
Hiraiwa, A. ; Ogasawara, M. ; Natsuaki, N. ; Itoh, Y. ; Iwai, H.
Author_Institution
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
157
Lastpage
160
Abstract
We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.
Keywords
DRAM chips; failure analysis; integrated circuit modelling; integrated circuit reliability; space-charge-limited conduction; DRAM retention failure; electron traps; energy-level distribution; local-field-enhancement model; space-charge-region-field variation; tail component; DRAM chips; Electron devices; Electron traps; Guidelines; Leakage current; Power generation; Probability distribution; Random access memory; Tail; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746306
Filename
746306
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