Title :
About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures
Author :
DAFINEI, Adrian S. ; MUNTEANU, Ion ; DAFINEI, Adrian A.
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
Abstract :
Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.
Keywords :
electrical resistivity; elemental semiconductors; porous semiconductors; semiconductor heterojunctions; semiconductor-metal boundaries; silicon; Si; distributed elements; electrical measurement; electrical resistance structure; electrical scheme; heterojunction; metal/porous silicon/p-silicon structures; modelling; moderately resistive pSi substrate; porous silicon; shunt resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Heterojunctions; Luminescence; Optical devices; Photonic band gap; Silicon; Space technology; Thermal conductivity;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105878
