DocumentCode
2572491
Title
About the determination of the shunt resistance of the metal/porous silicon/p-silicon structures
Author
DAFINEI, Adrian S. ; MUNTEANU, Ion ; DAFINEI, Adrian A.
Author_Institution
Fac. of Phys., Bucharest Univ., Romania
Volume
2
fYear
2002
fDate
2002
Firstpage
403
Abstract
Considering the real structure of porous silicon the paper proposes a modelling of the electrical resistance structure of a porous silicon layer prepared on moderately resistive pSi substrate. The interpretation of electrical measurements over the PS/Si structure considering an electrical scheme with distributed elements allows determining the shunt resistance of the heterojunction.
Keywords
electrical resistivity; elemental semiconductors; porous semiconductors; semiconductor heterojunctions; semiconductor-metal boundaries; silicon; Si; distributed elements; electrical measurement; electrical resistance structure; electrical scheme; heterojunction; metal/porous silicon/p-silicon structures; modelling; moderately resistive pSi substrate; porous silicon; shunt resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Heterojunctions; Luminescence; Optical devices; Photonic band gap; Silicon; Space technology; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105878
Filename
1105878
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