DocumentCode
2572516
Title
Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions
Author
McPherson, J. ; Reddy, V. ; Banerjee, K. ; Huy Le
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
171
Lastpage
174
Abstract
A low-field three-year TDDB study was undertaken to clearly understand which TDDB model, E or 1/E, describes the observed time-to-failure data better. The results are unambiguous and strongly suggest that the physics of failure is described much better by the E-model. This has important design-limit implications for thin gate oxides relative to the maximum electric field which can be allowed for reliable operation.
Keywords
CMOS integrated circuits; failure analysis; insulating thin films; integrated circuit design; integrated circuit reliability; integrated circuit testing; semiconductor device breakdown; silicon compounds; SiO/sub 2/; TDDB models; design-limit implications; failure physics; gate oxides; long-term test conditions; low-field test conditions; reliability; time-to-failure data; Acceleration; CMOS technology; Dielectric breakdown; Electric breakdown; Instruments; Life estimation; MOS capacitors; Physics; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746310
Filename
746310
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