Resonant tunneling in GaAs/AlGaAs superlattices with periodic potential profiles

Author

Niculescu, Ana

Author_Institution

COSMOROM S.A, Bucharest, Romania

Volume

2

fYear

2002

fDate

2002

Firstpage

411

Abstract

The effect of the periodicity over the transmission property in semiconductor superlattices is theoretically investigated. It is found that the increasing the number of periods in GaAs/AlGaAs multiple quantum wells (MQW) introduces additional resonant states. it is also noted that the asymmetry of periodic potential profile is one key parameter in reaching high values of the transmission coefficient. These results can provide a new method to obtain filters in the submillimeter range.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; interface states; resonant states; resonant tunnelling; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; MQW; asymmetry; multiple quantum wells; periodic potential profile; periodic potential profiles; periodicity; resonant states; resonant tunneling; semiconductor superlattices; transmission coefficient; transmission property; Effective mass; Electrons; Impedance; Quantum well devices; Resonance; Resonant tunneling devices; Schrodinger equation; Semiconductor materials; Semiconductor superlattices; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105880

Filename

1105880