Title :
Resonant tunneling in GaAs/AlGaAs superlattices with periodic potential profiles
Author_Institution :
COSMOROM S.A, Bucharest, Romania
Abstract :
The effect of the periodicity over the transmission property in semiconductor superlattices is theoretically investigated. It is found that the increasing the number of periods in GaAs/AlGaAs multiple quantum wells (MQW) introduces additional resonant states. it is also noted that the asymmetry of periodic potential profile is one key parameter in reaching high values of the transmission coefficient. These results can provide a new method to obtain filters in the submillimeter range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; interface states; resonant states; resonant tunnelling; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; MQW; asymmetry; multiple quantum wells; periodic potential profile; periodic potential profiles; periodicity; resonant states; resonant tunneling; semiconductor superlattices; transmission coefficient; transmission property; Effective mass; Electrons; Impedance; Quantum well devices; Resonance; Resonant tunneling devices; Schrodinger equation; Semiconductor materials; Semiconductor superlattices; Transmission line theory;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105880
