DocumentCode
2572575
Title
Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na2SiO3 solution interface
Author
Cojocaru, Ala ; Sherban, D. ; Simashkevic, A. ; Tiginyanu, I. ; Tsiulyanu, I. ; Ursaki, V.
Author_Institution
Inst. of Appl. Phys., Chisinau, Moldova
Volume
2
fYear
2002
fDate
2002
Firstpage
427
Abstract
The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs crystals also nanoporous n-GaAs material was used as a photoelectrode. Current-voltage characteristics in the dark and under illumination and spectral distribution of the photosensitivity were studied. The values of the photopotential reach 1V in the case of n-InP photoelectrode and 0.8V and 0.4V in the case of the nanoporous and bulk n-GaAs photoelectrode, respectively.
Keywords
III-V semiconductors; dark conductivity; electrochemical electrodes; gallium arsenide; indium compounds; nanoporous materials; photoelectrochemical cells; porous semiconductors; semiconductor-electrolyte boundaries; sodium compounds; 0.4 V; 0.8 V; 1 V; GaAs-Na2SiO3; GaAs/Na2SiO3 solution interface; InP-Na2SiO3; InP/Na2SiO3 solution interface; current-voltage characteristics; dark conductivity; nanoporous GaAs; photoelectrochemical properties; photoelectrode; photopotential; photosensitivity spectral distribution; semiconductor-electrolyte junction; Crystalline materials; Crystals; Electrons; III-V semiconductor materials; Ion implantation; Nanoporous materials; P-n junctions; Physics; Semiconductor materials; Solar energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105884
Filename
1105884
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