Title :
Design and Performance of A Broadband Millimeter-Wave MMC Mixer
Author :
Yu Zhao ; Bin, Liao ; Xuebang Gao ; Hongjiang, Wu
Author_Institution :
13th Res. Inst., CETC, Shijiazhuang, China
Abstract :
A Broadband Millimeter-Wave Passive Doubly-Balanced Mixer has been designed and fabricated with GaAs pHEMT process. The Mixer operates from 18 GHz to 50 GHz, with conversion loss less than 12 dB and LO to RF isolation greater than 25 dB. The IF bandwidth is from DC to 18 GHz. The Mixer employs ring diodes and spiral Marchand balun structure to improve operation bandwidth, conversion loss and port to port isolations. At one time, the chip size has been reduced remarkably, only 1.4mm×1.2mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; baluns; field effect MIMIC; field effect MMIC; gallium arsenide; millimetre wave mixers; GaAs; broadband millimeter wave MMC mixer; frequency 18 GHz to 50 GHz; operation bandwith; pHEMT process; passive doubly balanced mixer; ring diode; spiral Marchand balun; BroadBand; Double Balanced; Millimeter-Wave; Mixer Balun;
Conference_Titel :
Computational Problem-Solving (ICCP), 2012 International Conference on
Conference_Location :
Leshan
Print_ISBN :
978-1-4673-1696-5
Electronic_ISBN :
978-1-4673-1695-8
DOI :
10.1109/ICCPS.2012.6384327
