An RF BiCMOS process using high f/sub SR/ spiral inductor with premetal deep trenches and a dual recessed bipolar collector sink

This paper presents a newly developed RF mixed-signal BiCMOS technology which consists of a high self resonant frequency (f/sub SR/) spiral inductor, and complementary bipolar transistors implemented in a 0.2-/spl mu/m dual gate CMOS process. The main features of this technology are as follows; (1) a spiral inductor built on the premetal deep trenches decreases capacitive coupling and thus increases f/sub SR/, (40 GHz) by 75% compared to a conventional structure; (2) premetal deep trenches realize 19-dB reduction in substrate noise as well as latch-up immunity; (3) a dual recessed collector sink reduces transistor size and lowers collector resistance for a complementary bipolar transistors. We developed a premetal deep trench and recessed collector sink structures which are very promising to realize an RF mixed-signal system-on-a-chip.