Title :
An RF BiCMOS process using high f/sub SR/ spiral inductor with premetal deep trenches and a dual recessed bipolar collector sink
Author :
Yoshida, H. ; Suzuki, H. ; Kinoshita, Y. ; Fujii, H. ; Yamazaki, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
This paper presents a newly developed RF mixed-signal BiCMOS technology which consists of a high self resonant frequency (f/sub SR/) spiral inductor, and complementary bipolar transistors implemented in a 0.2-/spl mu/m dual gate CMOS process. The main features of this technology are as follows; (1) a spiral inductor built on the premetal deep trenches decreases capacitive coupling and thus increases f/sub SR/, (40 GHz) by 75% compared to a conventional structure; (2) premetal deep trenches realize 19-dB reduction in substrate noise as well as latch-up immunity; (3) a dual recessed collector sink reduces transistor size and lowers collector resistance for a complementary bipolar transistors. We developed a premetal deep trench and recessed collector sink structures which are very promising to realize an RF mixed-signal system-on-a-chip.
Keywords :
BiCMOS integrated circuits; inductors; integrated circuit noise; integrated circuit technology; mixed analogue-digital integrated circuits; 0.2 micron; 40 GHz; RF mixed-signal BiCMOS technology; capacitive coupling; collector resistance; complementary bipolar transistors; dual recessed bipolar collector sink; dual recessed collector sink; latch-up immunity; premetal deep trenches; spiral inductor; substrate noise; system-on-a-chip; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Inductors; Noise reduction; Radio frequency; Resonant frequency; Spirals; Strontium;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746328
