Title :
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer
Author :
Meneghesso, G. ; Buttari, D. ; Perin, E. ; Canali, C. ; Zanoni, E.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
In this paper we report on the elimination of the kink effect and of the hot-electron degradation in InP-based HEMTs which results from the insertion of an InP etch stop layer on top of the InAlAs donor layer. We attribute this improvement to the passivation, by means of InP, of deep levels on the surface of the InAlAs, as demonstrated by transconductance frequency dispersion measurements.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; passivation; semiconductor device reliability; HEMT; InAlAs-InGaAs; InP; deep levels; etch stop layer; hot-electron degradation; kink effect; passivation; reliability properties; transconductance frequency dispersion measurements; Degradation; Dispersion; Etching; Frequency; HEMTs; Indium compounds; Indium phosphide; MODFETs; Passivation; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746341
