Title :
Metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs on GaAs substrate: the influence of In composition
Author :
Bollaert, S. ; Cordier, Y. ; Happy, H. ; Zaknoune, M. ; Hoel, V. ; Lepilliet, S. ; Cappy, A.
Author_Institution :
Dept. Hyperfrequences et Semicond., Inst. d´Electron. et de Microelectron. du Nord, Villeneuve d´Ascq, France
Abstract :
State of the art metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/ 0.1 /spl mu/m gate HEMTs with different Indium compositions x=0.33, 0.4 and 0.5 have been realized and characterized. A cutoff frequency f/sub T/=195 GHz is obtained for an indium content x=0.4, which is close to the value obtained with LM-HEMT on InP realized with the same technological process.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 195 GHz; GaAs; GaAs substrate; In composition; InAlAs-InGaAs; cutoff frequency; metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMT; Doping; Electrons; Gallium arsenide; Gold; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746343
