DocumentCode
2572774
Title
Metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs on GaAs substrate: the influence of In composition
Author
Bollaert, S. ; Cordier, Y. ; Happy, H. ; Zaknoune, M. ; Hoel, V. ; Lepilliet, S. ; Cappy, A.
Author_Institution
Dept. Hyperfrequences et Semicond., Inst. d´Electron. et de Microelectron. du Nord, Villeneuve d´Ascq, France
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
235
Lastpage
238
Abstract
State of the art metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/ 0.1 /spl mu/m gate HEMTs with different Indium compositions x=0.33, 0.4 and 0.5 have been realized and characterized. A cutoff frequency f/sub T/=195 GHz is obtained for an indium content x=0.4, which is close to the value obtained with LM-HEMT on InP realized with the same technological process.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 195 GHz; GaAs; GaAs substrate; In composition; InAlAs-InGaAs; cutoff frequency; metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMT; Doping; Electrons; Gallium arsenide; Gold; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746343
Filename
746343
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