Deep submicron PHEMTs characterization with spectrally resolved carrier recombination imaging

Author

Wang, Z.Y. ; Qian, J.Y. ; Li-Jen Cheng ; Li, G.P. ; Chou, Y.C. ; Lai, R. ; Streit, D.C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

239

Lastpage

242

Abstract

A novel technique-spectrally resolved carrier recombination imaging-has been developed to characterize deep submicron PHEMTs. While a correlation between electroluminescence of 0.63 /spl mu/m and the gate current is observed in PHEMTs, that between electroluminescence of 1 /spl mu/m and the gate/drain current product is also verified. This distinct current dependence result is further supported by observing different polarization characteristics of 1 /spl mu/m and 0.63 /spl mu/m light emission, suggesting that they are generated from different layers inside the device. By using the established correlation function and post-processing the light emission image data, the distribution of electric field and current density along gate width is determined for the first time.

Keywords

current density; electroluminescence; electron-hole recombination; power HEMT; semiconductor device measurement; semiconductor device reliability; 0.63 micrometre; 1 micrometre; correlation function; current density; deep submicron PHEMTs; electroluminescence; gate current; gate width; gate/drain current product; light emission image data; polarization characteristics; spectrally resolved carrier recombination imaging; Current density; Electroluminescence; Hot carriers; Image resolution; Millimeter wave technology; Narrowband; Optical polarization; PHEMTs; Spatial resolution; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746344

Filename

746344