A new dynamic model for the kink effect in InAlAs/InGaAs HEMTs

Author

Somerville, M.H. ; Ernst, A. ; Del Alamo, J.A.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

243

Lastpage

246

Abstract

We present a new model for the dynamic behavior of the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises due to hole pileup in the extrinsic source and an ensuing charging of the surface. The model is incorporated in a simple equivalent circuit, which explains well DC characteristics of the kink, its time evolution in the nanosecond range, as well as its dependence on illumination.

Keywords

III-V semiconductors; aluminium compounds; electron traps; equivalent circuits; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; kink bands; semiconductor device measurement; semiconductor device models; DC characteristics; HEMTs; III-V semiconductors; InAlAs-InGaAs; dynamic model; equivalent circuit; extrinsic source; hole pileup; illumination; kink effect; threshold voltage shift; time evolution; Diodes; Equivalent circuits; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Insulation; MODFETs; Surface resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746345

Filename

746345