Title :
Integrated a-Si:H/pentacene inorganic/organic complementary circuits
Author :
Bonse, M. ; Thomasson, D.B. ; Klauk, H. ; Gundlach, D.J. ; Jackson, T.N.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 /spl mu/s, the fastest speed reported for circuits using organic transistors.
Keywords :
CMOS logic circuits; amorphous semiconductors; delays; elemental semiconductors; low-power electronics; organic semiconductors; silicon; thin film transistors; Si:H; inorganic/organic complementary circuits; logic level conservation; low-cost fabrication process; n-channel devices; off-currents; organic TFTs; p-channel devices; ring oscillators; static operation; switching gain; thin film transistors; Delay; Fabrication; Integrated circuit measurements; Logic circuits; Logic devices; Pentacene; Ring oscillators; Switching circuits; Thin film transistors; Velocity measurement;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746347
