Title :
Polysilicon thin film transistors fabricated at 100/spl deg/C on a flexible plastic substrate
Author :
Theiss, S.D. ; Carey, P.G. ; Smith, P.M. ; Wickboldt, P. ; Sigmon, T.W. ; Tung, Y.J. ; King, T.-J.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
Abstract :
We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100/spl deg/C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO/sub 2/ layer for the gate dielectric, and a post-fabrication anneal at 150/spl deg/C, we have succeeded in fabricating TFTs with I/sub ON//I/sub OFF/ ratios >5/spl times/10/sup 5/ and electron mobilities >60 cm/sup 2//V-s on polyester substrates.
Keywords :
crystallisation; electron mobility; elemental semiconductors; heavily doped semiconductors; laser beam applications; semiconductor doping; silicon; thin film transistors; 100 degC; PET; Si; electron mobilities; excimer laser applications; flexible plastic substrate; gate dielectric; heavily doped semiconductors; laser crystallization; polyester substrates; polysilicon thin film transistors; post-fabrication anneal; source/drain regions; Costs; Crystallization; Dielectric substrates; Displays; Optical pulses; Plastics; Positron emission tomography; Pulsed laser deposition; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746349
