Title :
Highly reliable liquid-phase deposited SiO/sub 2/ with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFTs
Author :
Yeh, C.F. ; Chen, D.C. ; Lu, C.Y. ; Liu, C. ; Lee, S.T. ; Liu, C.H. ; Chen, T.J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Low temperature (/spl sim/300/spl deg/C) N/sub 2/O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N/sub 2/O-treated LPD-SiO/sub 2/ improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFTs, which reveal excellent characteristics and reliability. It is believed that the N/sub 2/O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.
Keywords :
annealing; electric breakdown; elemental semiconductors; insulating thin films; interface states; liquid phase deposited coatings; plasma materials processing; semiconductor device reliability; silicon; silicon compounds; thin film transistors; 300 C; N/sub 2/O; Si-SiO/sub 2/; breakdown field; electrical characteristics; gate oxide film; interface state density; liquid phase deposition; low temperature processing; nitrous oxide plasma annealing; polysilicon TFT; reliability; trap state passivation; Aluminum; Atomic layer deposition; Capacitance-voltage characteristics; Fabrication; Nitrogen; Plasma chemistry; Plasma density; Plasma materials processing; Plasma properties; Plasma temperature;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746352
