DocumentCode :
2573036
Title :
Functional high-speed characterization and modeling of a six-layer copper wiring structure and performance comparison with aluminum on-chip interconnections
Author :
Deutsch, A. ; Harrer, H. ; Surovic, C.W. ; Hellner, G. ; Edelstein, D.C. ; Goldblatt, R.D. ; Biery, G.A. ; Greco, N.A. ; Foster, D.M. ; Crabbe, E. ; Su, L.T. ; Coteus, P.W.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
295
Lastpage :
298
Abstract :
Experimental high-speed characterization and electrical modeling and simulation are presented for a six-layer Cu/SiO/sub 2/ on-chip wiring structure with 12.4-mm-long lines. Testing is performed over the temperature range -160/spl deg/C to +100/spl deg/C and across a 200-mm-diameter wafer. Very good agreement is reported between measured and simulated signal propagation and crosstalk waveforms. Modeling is done using a three-dimensional field solver and the R(f), L(f), and C matrices are used in a synthesized distributed network to simulate the signal behavior. Such a broadband analysis comprises the first comprehensive functional testing of a multi-layer Cu/SiO/sub 2/ wiring structure. The Cu interconnections are shown to be able to sustain 5.39 GHz microprocessor frequencies at T=+25/spl deg/C operation at a scaled wiring density increase of 17.5%, while comparable Al(Cu) wiring can achieve only 4.44 GHz (21.4% improvement).
Keywords :
copper; crosstalk; high-speed integrated circuits; integrated circuit interconnections; integrated circuit modelling; integrated circuit testing; -160 to 100 C; 5.39 GHz; Al; Cu-SiO/sub 2/; aluminum on-chip interconnection; broadband analysis; crosstalk waveform; electrical model; functional testing; high-speed operation; microprocessor; multilayer copper wiring; signal propagation; simulation; three-dimensional field solver; Crosstalk; Frequency; Microprocessors; Network synthesis; Performance evaluation; Semiconductor device modeling; Signal synthesis; Temperature distribution; Testing; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746358
Filename :
746358
Link To Document :
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