Horizontal Distribution Properties of the Electron Temperature and Density in the XE Based ICP

Summary form only given. The ICP can produce a high plasma density in a low gas discharge. In particular, the ICP has been widely used in the field of semiconductor processes, and various other industries because it is easy to produce. The electrodeless fluorescent lamp presented a high efficiency, color rendition, long lifetime as long as 10,000 hours. However, these products can cause environmental problems because they contain mercury (Hg) as well as the existing fluorescent lamp. The Xe among these material is a type of environmentally-friendly material differed from mercury, and do not affect the property of light radiation under the ambient temperature. In addition, it has a wide light property from UV to visible light. This paper designed an ICP source to systematically understand a Xe plasma, which is to be used as a light source, and to promote the effectiveness and optimization of the ICP source. In addition, the basic properties of plasma were measured, such as the parameters of electron temperature and density. These experimental results are essential factors to develop a high performance and efficient light source. The brightness property was also measured by varying the Xe pressure ranged from 20 to 100 mtorr inside the discharge tube, and RF power ranged from 50 to 200 W. In order to understand the state of plasma, the electron temperature that is a kind of plasma variable and presents a few eV of electron temperature, and electron density, which is presented by, were calculated and measured using an electrostatic probing method with a Langmuir probe. Moreover, the spatial distribution along the axis of plasma was numerically analyzed by varying the position of the probe. Using these results, the optical property and physical variables were investigated for the Xe ICP, which will be used as a light source.