0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (RELACS)

Author

Toyoshima, T. ; Ishibashi, T. ; Minanide, A. ; Sugino, K. ; Katayama, K. ; Shoya, T. ; Arimoto, I. ; Yasuda, N. ; Adachi, H. ; Matsui, Y.

Author_Institution

Adv. Technol. Res. & Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

333

Lastpage

336

Abstract

We developed a hole shrink process named RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) that is a robust and low-cost method. This method makes use of crosslinking reaction between the materials coated on the resist pattern, and the acid existing at the resist wall. By the RELACS, we could shrink KrF resist hole patterns to 0.1 /spl mu/m level. The shrinkage of hole size is dependent on both baking temperature and initial hole size. This process has been established for the fabrication of 0.20 /spl mu/m devices.

Keywords

VLSI; integrated circuit metallisation; photolithography; shrinkage; 0.1 micron; KrF; RELACS; baking temperature; chemical shrink; contact hole pattern formation; crosslinking reaction; hole shrink process; initial hole size; resist hole patterns; resolution enhancement lithography; Chemical processes; Lithography; Pattern formation; Resists; Shape; Size control; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746367

Filename

746367