Title :
A monolithic 2-20 GHz GaAs pin diode SP16T switch
Author :
Pritchett, S.D. ; Seymour, D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A broadband, monolithic, single-pole, sixteen-throw (SP16T) switch has been fabricated using GaAs vertical PIN diodes. The SP16T switch features less than 4.5-dB insertion loss with greater than 35-dB isolation across the 2-20-GHz band. A novel de-embedding scheme used for switch characterization is also introduced.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit testing; p-i-n diodes; semiconductor switches; switching circuits; 2 to 20 GHz; 4.5 dB; APC-7 three port test fixture; GaAs; III-V semiconductor; MMIC; SHF; SP16T switch; broadband; de-embedding scheme; deembedding scheme; insertion loss; monolithic sixteen throw switch; pin diode; single-pole; switch characterization; vertical p-i-n diodes; Aerospace electronics; Diodes; FETs; Gallium arsenide; Impedance; Insertion loss; Scanning electron microscopy; Size control; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38916
