• DocumentCode
    2573297
  • Title

    Metal contact RF MEMS switch elements for ultra wideband RF front-end systems

  • Author

    Schaffner, James H. ; Schmitz, Adele E. ; Hsu, Tsung-Yuan ; Chang, David T. ; Loo, Robert Y. ; Sievenpiper, Daniel F.

  • Author_Institution
    HRL Labs., Malibu, CA, USA
  • fYear
    2003
  • fDate
    16-19 Nov. 2003
  • Firstpage
    32
  • Lastpage
    36
  • Abstract
    Metal contact RF MEMS switch circuit elements have been developed to be used as building blocks for wideband signal routing. A switch element can have up to four switches fabricated monolithically on a single GaAs chip. More complicated switch circuits can be constructed by assembling multiple basic switch elements on a hybrid RF interconnection printed circuit board. In this paper, two basic types of switch functions are presented, single-pole multiple-throw switch elements and matrix switch elements. Measured insertion loss and isolation performances of these circuits are presented.
  • Keywords
    III-V semiconductors; contactors; gallium arsenide; integrated circuit interconnections; microswitches; GaAs; GaAs chip; RF interconnection printed circuit board; metal contact RF MEMS switch circuit elements; ultra wideband RF front-end systems; wideband signal routing; Assembly; Contacts; Gallium arsenide; RF signals; Radio frequency; Radiofrequency microelectromechanical systems; Routing; Switches; Switching circuits; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultra Wideband Systems and Technologies, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-8187-4
  • Type

    conf

  • DOI
    10.1109/UWBST.2003.1267797
  • Filename
    1267797