DocumentCode
2573297
Title
Metal contact RF MEMS switch elements for ultra wideband RF front-end systems
Author
Schaffner, James H. ; Schmitz, Adele E. ; Hsu, Tsung-Yuan ; Chang, David T. ; Loo, Robert Y. ; Sievenpiper, Daniel F.
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2003
fDate
16-19 Nov. 2003
Firstpage
32
Lastpage
36
Abstract
Metal contact RF MEMS switch circuit elements have been developed to be used as building blocks for wideband signal routing. A switch element can have up to four switches fabricated monolithically on a single GaAs chip. More complicated switch circuits can be constructed by assembling multiple basic switch elements on a hybrid RF interconnection printed circuit board. In this paper, two basic types of switch functions are presented, single-pole multiple-throw switch elements and matrix switch elements. Measured insertion loss and isolation performances of these circuits are presented.
Keywords
III-V semiconductors; contactors; gallium arsenide; integrated circuit interconnections; microswitches; GaAs; GaAs chip; RF interconnection printed circuit board; metal contact RF MEMS switch circuit elements; ultra wideband RF front-end systems; wideband signal routing; Assembly; Contacts; Gallium arsenide; RF signals; Radio frequency; Radiofrequency microelectromechanical systems; Routing; Switches; Switching circuits; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultra Wideband Systems and Technologies, 2003 IEEE Conference on
Print_ISBN
0-7803-8187-4
Type
conf
DOI
10.1109/UWBST.2003.1267797
Filename
1267797
Link To Document