Voltage-tolerant monolithic L-band GaAs SPDT switch

Author

Cooper, S.W. ; Truitt, G.A.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1113

Abstract

A monolithic, L-band, single-pole, double-throw, nonreflective (SPDTNR) GaAs FET switch has been developed. The switch has been shown to be significantly less sensitive to DC ripple than conventional FET switches, and it operates with either positive or negative control voltages. Small-signal insertion loss is less than 1.3 dB over a 1- to 2-GHz bandwidth with less than 1.3:1 VSWR (voltage standing-wave ratio) in all states. Isolation exceeds 35 dB, with a switching current requirement of less than 10 mu A. The chip size is 0.97 mm*1.75 mm*0.15 mm, which permits more than 2100 monolithic switches to be fabricated on a 3-in GaAs wafer. The switch is compatible with TTL (transistor transistor logic) or CMOS logic levels.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; semiconductor switches; 1 to 2 GHz; 1.3 dB; 10 muA; CMOS logic level compatibility; GaAs; III-V semiconductors; L-band; MMIC; SPDT switch; TTL compatibility; double-throw; insertion loss; microwave type; negative control voltages; nonreflective FET switch; positive control voltages; single-pole; switching current requirement; voltage tolerant monolithic switch; FETs; Gallium arsenide; Insertion loss; L-band; Semiconductor device modeling; Switched capacitor circuits; Switches; Switching circuits; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38917

Filename

38917