Title :
Voltage-tolerant monolithic L-band GaAs SPDT switch
Author :
Cooper, S.W. ; Truitt, G.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A monolithic, L-band, single-pole, double-throw, nonreflective (SPDTNR) GaAs FET switch has been developed. The switch has been shown to be significantly less sensitive to DC ripple than conventional FET switches, and it operates with either positive or negative control voltages. Small-signal insertion loss is less than 1.3 dB over a 1- to 2-GHz bandwidth with less than 1.3:1 VSWR (voltage standing-wave ratio) in all states. Isolation exceeds 35 dB, with a switching current requirement of less than 10 mu A. The chip size is 0.97 mm*1.75 mm*0.15 mm, which permits more than 2100 monolithic switches to be fabricated on a 3-in GaAs wafer. The switch is compatible with TTL (transistor transistor logic) or CMOS logic levels.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; semiconductor switches; 1 to 2 GHz; 1.3 dB; 10 muA; CMOS logic level compatibility; GaAs; III-V semiconductors; L-band; MMIC; SPDT switch; TTL compatibility; double-throw; insertion loss; microwave type; negative control voltages; nonreflective FET switch; positive control voltages; single-pole; switching current requirement; voltage tolerant monolithic switch; FETs; Gallium arsenide; Insertion loss; L-band; Semiconductor device modeling; Switched capacitor circuits; Switches; Switching circuits; Topology; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38917
