Title :
Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-/spl mu/m CMOS devices
Author :
Ohnishi, K. ; Yamamoto, N. ; Uchino, T. ; Hanaoka, Y. ; Tsuchiya, R. ; Nonaka, Y. ; Tanabe, Y. ; Umezawa, T. ; Fukuda, N. ; Mitani, S. ; Shiba, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Highly reliable W/WNx/dual-polySi stacked-gate technology for fabricating 0.14-/spl mu/m CMOS devices was developed. This technology uses a unique wet-hydrogen (WH) oxidation for achieving gate edge recovery following dry etching. We eliminated gate leakage thoroughly while simultaneously suppressing boron (B) penetration in PMOS by precisely controlling WH oxidation conditions. This oxidation technology results in high-performance CMOS characteristics.
Keywords :
CMOS integrated circuits; integrated circuit metallisation; oxidation; tungsten; tungsten compounds; 0.14 micron; CMOS device; H/sub 2/; W-WN-Si; W/WNx/dual-poly Si stacked gate technology; dry etching; gate oxide integrity; wet hydrogen oxidation; CMOS technology; Dielectrics; Dry etching; Electrodes; Hydrogen; Ion implantation; MOS devices; Oxidation; Tin; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746383
