A new dynamic-threshold SOI device having an embedded resistor and a merged body-bias-control transistor

An embedded resistor just under the source junction and a small subsidiary body-bias-control transistor enables construction of a variable-threshold SOI-MOSFET with a small area penalty and without any limitation on the power-supply voltage. In the primary transistor, this resistor not only controls the body potential to increase the on-current and decrease the off-current under the AC condition, but also eliminates floating-body effects. The inverter delay time with and without a 1 pF load capacitance can be shortened to 55% and 40%, respectively, of that of a bulk device under 1 V operation.