Title :
High performance electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage
Author :
Takamiya, M. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
A novel Electrically Induced Body DTMOS (EIB-DTMOS) is proposed where the body is electrically induced by the substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves the large body effect and low V/sub th/ at the same time. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest current drive at fixed off-current due to the large V/sub th/ shift and the suppressed short channel effect.
Keywords :
MOSFET; low-power electronics; silicon-on-insulator; EIB-DTMOS device; Si; accumulation mode; dynamic threshold SOI MOSFET; electrically induced body; large body effect; low threshold voltage; substrate bias; suppressed short channel effect; Body regions; Contacts; Doping; Ion implantation; Joining processes; Low voltage; MOSFET circuits; Power MOSFET; Threshold voltage; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746389
