Spectral hole burning of InAs self-assembled quantum dots written by two different lasers

Author

Sugiyama, Y. ; Nakata, Y. ; Muto, S. ; Futatsugi, T. ; Yokoyama, N.

Author_Institution

Fujitsu Ltd., Atsugi, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

445

Lastpage

448

Abstract

We report, for the first time, the two spectral holes in photocurrent of InAs self-assembled quantum dots embedded in a p-i-n diode irradiated by two different lasers. The estimated homogeneous broadening of less than 30 /spl mu/ eV for InAs QD implies the possibility of wavelength multiplicity of /spl ges/2800 for hole burning memory using QD. The spectral hole width irradiated by single mode YAG laser at 1064 nm showed temperature dependence of exp(T/30.9) in the range from 5 K to 80 K.

Keywords

III-V semiconductors; indium compounds; laser materials processing; optical hole burning; optical storage; p-i-n diodes; photoconductivity; semiconductor quantum dots; 1064 nm; 5 to 80 K; III-V semiconductors; InAs; hole burning memory; homogeneous broadening; p-i-n diode; photocurrent; self-assembled quantum dots; spectral hole burning; temperature dependence; wavelength multiplicity; Laser excitation; Laser modes; Laser theory; Light sources; Nonlinear optics; Photoconductivity; Quantum dot lasers; Spectroscopy; US Department of Transportation; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746394

Filename

746394