Room temperature Coulomb oscillation and memory effect for single electron memory made by pulse-mode AFM nano-oxidation process

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the periods of 2.1 V at room temperature. A single electron memory showed the hysteresis loop by the return trip of the memory bias when starting from 0 V to 10 V and again coming back to 0 V.