DocumentCode
2573648
Title
A resonant terahertz detector utilizing a high electron mobility transistor
Author
Jian-Qiang Lu ; Shur, M.S. ; Hesler, J.L. ; Liangquan Sun ; Weikle, R., II
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
453
Lastpage
456
Abstract
We report on the implementation of a terahertz detector utilizing two-dimensional electronic fluid in a high electron mobility transistor. The device response is compared with the predictions of the hydrodynamic theory of electronic fluid. The results indicate the viscosity of electronic fluid might be larger than estimated previously. We also report on the unusual polarization dependence of the detector response.
Keywords
high electron mobility transistors; infrared detectors; two-dimensional electron gas; device response; high electron mobility transistor; hydrodynamic theory; polarization dependence; resonant terahertz detector; two-dimensional electronic fluid; viscosity; Electromagnetic radiation; Electrons; Frequency; HEMTs; Infrared detectors; MODFETs; Polarization; Radiation detectors; Resonance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746396
Filename
746396
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