DocumentCode
2573689
Title
A high fill-factor IR bolometer using multi-level electrothermal structures
Author
Hyung-Kew Lee ; Jun-Bo Yoon ; Euisik Yoon ; Sang-Baek Ju ; Yoon-Joong Yong ; Wook Lee ; Sang-Gook Kim
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
463
Lastpage
466
Abstract
In this paper we report the design, fabrication, and performance of a high fill-factor uncooled IR (Infrared) bolometer using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxynitride membrane (50 /spl mu/m /spl times/50 /spl mu/m). This bolometer structure comprises multi-level electrothermal structures, which allow almost 92% fill factor. From this multi-layered structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 msec, a responsivity of 1600 V/W, and a detectivity of D*=5/spl times/10/sup 8/ cm/spl radic/(Hz)/W.
Keywords
bolometers; infrared detectors; micromachining; microsensors; thin film resistors; Ti-SiON; detectivity; fill factor; infrared bolometer; multilayer; multilevel electrothermal structure; responsivity; surface micromachined silicon oxynitride membrane; thermal isolation; thermal time constant; thin film titanium resistor; Biomembranes; Bolometers; Electrothermal effects; Fabrication; Infrared detectors; Isolation technology; Leg; Micromachining; Resistors; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746398
Filename
746398
Link To Document