DocumentCode :
2573778
Title :
In-plane sensitive vertical trench-Hall device
Author :
Steiner, R. ; Kroener, F. ; Olbrich, T. ; Baresch, R. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
479
Lastpage :
482
Abstract :
A novel vertical trench-Hall device sensitive to components of the magnetic induction parallel to the chip surface is reported. It is fabricated by trench-etching followed by a set of CMOS steps. The device exhibits a sensitivity of 250 V/AT, a linearity error below 0.1% for inductions up to 0.3 T, and a cross-sensitivity below 0.2% over the full circle. The fabrication technology enables co-integration of sensor and front-end circuitry on the same chip electrically insulated. Additionally, the sensor bears the potential for dynamic offset compensation by means of spinning current. Therefore, the implementation of an accurate and inexpensive 2D-magnetic-sensor system in CMOS technology is straightforward.
Keywords :
CMOS integrated circuits; Hall effect transducers; compensation; electromagnetic induction; etching; magnetic sensors; 0 to 0.3 T; 2D-magnetic-sensor system; CMOS technology; chip surface; cross-sensitivity; dynamic offset compensation; fabrication technology; front-end circuitry; linearity error; magnetic induction; sensitivity; spinning current; trench-etching; vertical trench-Hall device; CMOS technology; Circuits; Dielectrics and electrical insulation; Etching; Magnetic devices; Magnetic field measurement; Magnetic sensors; Magnets; Position measurement; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746402
Filename :
746402
Link To Document :
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