Title :
Predictive simulation of transient activation processes in boron-doped silicon structures
Author :
Lilak, A.D. ; Law, M.E. ; Jones, K.S. ; Giles, M.D. ; Andideh, E. ; Caturla, M.-J. ; Diaz de la Rubia, T. ; Jing Zhu ; Theiss, S.
Author_Institution :
SWAMP Center, Florida Univ., Gainesville, FL, USA
Abstract :
A physically-based continuum diffusion/clustering model has been applied to the simulation of transient activation/reactivation of ion implanted boron. This work is aimed at the optimization and development of post-implant thermal cycles for minimal dopant diffusion with peak activation. This model has been successfully applied to the simulation of several new structures exhibiting partial deactivation of the implanted boron.
Keywords :
boron; diffusion; elemental semiconductors; segregation; semiconductor doping; semiconductor process modelling; silicon; Si:B; minimal dopant diffusion; partial deactivation; physically-based continuum diffusion/clustering model; post-implant thermal cycles; predictive simulation; transient activation processes; Annealing; Boron; Laboratories; MOS devices; Physics; Predictive models; Semiconductor process modeling; Silicon; Tail; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746405
