DocumentCode
2573831
Title
Predictive simulation of transient activation processes in boron-doped silicon structures
Author
Lilak, A.D. ; Law, M.E. ; Jones, K.S. ; Giles, M.D. ; Andideh, E. ; Caturla, M.-J. ; Diaz de la Rubia, T. ; Jing Zhu ; Theiss, S.
Author_Institution
SWAMP Center, Florida Univ., Gainesville, FL, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
493
Lastpage
496
Abstract
A physically-based continuum diffusion/clustering model has been applied to the simulation of transient activation/reactivation of ion implanted boron. This work is aimed at the optimization and development of post-implant thermal cycles for minimal dopant diffusion with peak activation. This model has been successfully applied to the simulation of several new structures exhibiting partial deactivation of the implanted boron.
Keywords
boron; diffusion; elemental semiconductors; segregation; semiconductor doping; semiconductor process modelling; silicon; Si:B; minimal dopant diffusion; partial deactivation; physically-based continuum diffusion/clustering model; post-implant thermal cycles; predictive simulation; transient activation processes; Annealing; Boron; Laboratories; MOS devices; Physics; Predictive models; Semiconductor process modeling; Silicon; Tail; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746405
Filename
746405
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