Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si

Author

Saito, T. ; Xia, J. ; Kim, R. ; Aoki, T. ; Kobayashi, H. ; Kamakura, Y. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

497

Lastpage

500

Abstract

Boron segregation and transient enhanced diffusion (TED) of boron atoms during annealing were investigated under two types of wafers implanted with Si ions. We found the following facts: (1) boron segregation to {311} defects has been observed at low temperature annealing. (2) {311} defects were formed in the area where the self-interstitial concentration exceeds 3/spl times/10/sup 17/ cm/sup -3/. (3) Free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

Keywords

MIS devices; annealing; boron; diffusion; doping profiles; elemental semiconductors; ion implantation; segregation; silicon; MOS devices; Si:B,Si; doping profiles; low temperature annealing; rapid enhanced diffusion; segregation; self-interstitial concentration; transient enhanced diffusion; Annealing; Boron; Electronic mail; Impurities; Information systems; Ion implantation; MOS devices; Silicon; Temperature control; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746406

Filename

746406