Modeling solid source boron diffusion for advanced transistor applications

Author

Packan, P. ; Thompson, S. ; Andideh, E. ; Yu, S. ; Ghani, T. ; Giles, M. ; Sandford, J. ; Bohr, M.

Author_Institution

TCAD, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

505

Lastpage

508

Abstract

In this paper, experimental results for B indiffusion from borosilicate glass (BSG) for formation of extremely shallow, highly doped regions are presented. The effects of BSG film concentration, anneal temperature and anneal time are presented. It is shown, for the first time, that the presence of excess silicon interstitials in the silicon substrate can strongly retard B indiffusion. In addition, the B indiffusion process from BSG is seen to enhance B diffusivity. These effects are modeled using B/Si interstitial interactions. This doping technique is integrated into a 0.15 /spl mu/m gate, 1.8 V CMOS process for PMOS source and drain extension (SDE) formation resulting in drive currents of 0.35 mA//spl mu/m at an off current of 1 nA//spl mu/m.

Keywords

MOSFET; annealing; boron; diffusion; elemental semiconductors; interstitials; semiconductor doping; semiconductor process modelling; silicon; 0.15 micron; 1.8 V; B2O3-SiO2; BSG; CMOS process; PMOS transistor; Si:B; annealing; borosilicate glass film; doping; interstitial; model; silicon substrate; solid source boron diffusion; source and drain extension; Annealing; Boron; Glass; Semiconductor device modeling; Semiconductor process modeling; Silicon; Solid modeling; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746408

Filename

746408