DocumentCode :
2573917
Title :
Monte Carlo simulation of ion implantation into topographically complex structures
Author :
Obradovic, B.J. ; Balamurugan, G. ; Wang, G. ; Chen, Y. ; Tasch, A.F.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
513
Lastpage :
516
Abstract :
A new physically based Monte Carlo ion implantation simulator has been developed and implemented in UT-MARLOWE. The new simulator is capable of simulating 2-D and 3-D implants into arbitrary topography with multiple layers, both crystalline and amorphous. Emphasis has been placed on computational efficiency, and improvements over previous simulators ranging from 1-3 orders of magnitude in CPU time have been observed. The accuracy of the simulation is observed not to be compromised by the algorithms for improved computational efficiency.
Keywords :
Monte Carlo methods; ion implantation; semiconductor process modelling; Monte Carlo simulation; UT-MARLOWE; algorithm; computational efficiency; ion implantation; topographical structure; Analytical models; Computational efficiency; Computational modeling; Geometry; Implants; Ion implantation; Monte Carlo methods; Semiconductor process modeling; Solid modeling; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746410
Filename :
746410
Link To Document :
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