New analytic models and efficient parameter extraction for computationally efficient 1-D and 2-D ion implantation modeling

The rapid progress of CMOS process technology has led to increased process complexity and fabrication cost and has created a strong need for accurate and computationally efficient ion implantation models. In this paper, we propose new and improved analytic models for as-implanted impurity and damage profiles in one and two dimensions. The development of models for the as-implanted damage profile is becoming increasingly important, since it is well known that the implant-induced damage has a significant impact on the diffusion of impurities during subsequent thermal treatment, especially under minimal thermal budget conditions. A new approach to 2-D analytic ion implant simulation that takes into account implant-induced damage, and generates 2-D interstitial/vacancy profiles in addition to impurity profiles, is also described. Finally, a methodology is discussed for automating the extraction of model parameters for generating lookup tables.