• DocumentCode
    2573957
  • Title

    Application of a new circuit design oriented Q extraction technique to inductors in silicon ICs

  • Author

    Tong Chen ; Kihong Kim ; O, K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • fYear
    1998
  • fDate
    6-9 Dec. 1998
  • Firstpage
    527
  • Lastpage
    530
  • Abstract
    Using a circuit design oriented Q extraction technique based on bandwidth (Q/sub bw/), Q factors of a wide range of inductor structures are studied and compared to Q factors extracted using the conventional technique (Q/sub conv/=-Im(y/sub 11/)/Re(y/sub 11/)). This new technique corrects the under-estimation problem of the Q/sub conv/ at moderate to high frequencies. Use of Q/sub conv/ can result erroneous conclusions leading to improper inductor optimization. To make the difference between Q/sub conv/ and Q/sub bw/ lower than 10% for all the examined inductors, the |W~/sub m/|/|W~/sub e/| (average magnetic energy/average electrical energy) ratio computed using the extracted inductor model parameters should be greater than /spl sim/20.
  • Keywords
    Q-factor; elemental semiconductors; inductors; integrated circuit design; silicon; Q-factor; Si; bandwidth; circuit design; inductor; model; optimization; parameter extraction; silicon IC; Application specific integrated circuits; Bandwidth; Capacitors; Circuit synthesis; Frequency estimation; Inductors; Multilevel systems; Q factor; Resonant frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4774-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1998.746413
  • Filename
    746413