DocumentCode :
257402
Title :
CNTFET SPICE Model: Design of a Carbon Nanotube Field Effect Transistor
Author :
Farhana, Soheli ; Alam, A. H. M. Zahirul ; Khan, Sheroz ; Motakabber, S.M.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
fYear :
2014
fDate :
23-25 Sept. 2014
Firstpage :
262
Lastpage :
264
Abstract :
In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET) and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as drain current variation as a function of the conductance and drain-source voltage. Furthermore, a SPICE small signal model nanotube transistor is developed. It is used for studying the performance of current gain as well as design of nanotube transistor circuits and phase angle with cut-off frequency. CNT diameter is responsible for the better performance of CNTFET. Therefore an optimum diameter of CNT is imposed here to develop CNTFET.
Keywords :
SPICE; carbon nanotube field effect transistors; semiconductor device models; CNT diameter; CNTFET SPICE model; carbon nanotube field effect transistor; current gain; cut-off frequency; drain current variation; drain-source voltage; phase angle; small signal model; Analytical models; CNTFETs; Capacitance; Cutoff frequency; Logic gates; SPICE; CNTFET; SPICE; gain; small signal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer and Communication Engineering (ICCCE), 2014 International Conference on
Conference_Location :
Kuala Lumpur
Type :
conf
DOI :
10.1109/ICCCE.2014.81
Filename :
7031652
Link To Document :
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