CNTFET SPICE Model: Design of a Carbon Nanotube Field Effect Transistor

Author

Farhana, Soheli ; Alam, A. H. M. Zahirul ; Khan, Sheroz ; Motakabber, S.M.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia

fYear

2014

fDate

23-25 Sept. 2014

Firstpage

262

Lastpage

264

Abstract

In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET) and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as drain current variation as a function of the conductance and drain-source voltage. Furthermore, a SPICE small signal model nanotube transistor is developed. It is used for studying the performance of current gain as well as design of nanotube transistor circuits and phase angle with cut-off frequency. CNT diameter is responsible for the better performance of CNTFET. Therefore an optimum diameter of CNT is imposed here to develop CNTFET.

Keywords

SPICE; carbon nanotube field effect transistors; semiconductor device models; CNT diameter; CNTFET SPICE model; carbon nanotube field effect transistor; current gain; cut-off frequency; drain current variation; drain-source voltage; phase angle; small signal model; Analytical models; CNTFETs; Capacitance; Cutoff frequency; Logic gates; SPICE; CNTFET; SPICE; gain; small signal;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Engineering (ICCCE), 2014 International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/ICCCE.2014.81

Filename

7031652