DocumentCode :
2574052
Title :
Novel high-Q bondwire inductor for MMIC
Author :
Yong-Goo Lee ; Sang-Ki Yun ; Hai-Young Lee
Author_Institution :
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
548
Lastpage :
551
Abstract :
A novel high-Q on-chip inductor using bondwire loops is proposed for low cost and high performance GaAs MMIC. The measured maximum quality factor and the self-resonant frequency are 21.1 (26.5) and 11.3 (17.0) GHz for 3.5 (2.1) nH inductance, respectively. The electrical variations are measured within 5% tolerance. The on-chip bondwire inductor can be effectively used for developing GaAs MMIC with no external inductors.
Keywords :
III-V semiconductors; MMIC; Q-factor; gallium arsenide; inductors; lead bonding; 11.3 GHz; 17.0 GHz; GaAs; GaAs MMIC; on-chip bondwire inductor; quality factor; self-resonant frequency; Bonding; Costs; Frequency; Gallium arsenide; Inductors; MMICs; Manufacturing; Q factor; Spirals; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746418
Filename :
746418
Link To Document :
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