Title :
Direct detecting of dynamic floating-body effects in SOI circuits by backside electron beam testing
Author :
Yoshida, E. ; Koyama, T. ; Maeda, S. ; Yamaguchi, Y. ; Komori, J. ; Mashiko, Y.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
It is demonstrated that the dynamic floating-body effects in SOI circuits can be detected directly by backside electron beam (EB) testing. Using the present technique, we have determined the actual body potential waveform during dynamic operation and confirmed that 0.35/spl mu/m field-shield SOI CMOS devices provide stable-operation while keeping such merits of SOI as quicker switching.
Keywords :
CMOS integrated circuits; electron beam testing; integrated circuit testing; low-power electronics; silicon-on-insulator; 0.35 micron; SOI circuits; backside electron beam testing; body potential waveform; dynamic floating-body effects; field-shield SOI CMOS devices; switching speed; Circuit testing; Clocks; Electron beams; Inverters; Logic testing; MOSFET circuits; Silicon; Spatial resolution; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746422
