Importance of Si-N atomic configuration at the Si/oxynitride interfaces on the performance of scaled MOSFETs

Author

Takayanagi-Takagi, M. ; Toyoshima, Y.

Author_Institution

ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

575

Lastpage

578

Abstract

This paper reports the studies on the inversion-layer mobility in n-MOSFETs having N/sub 2/O- and NO-based oxynitrided gate oxides. Different behavior on the effective normal field (E/sub eff/) dependence have been found between N/sub 2/Oand NO-based oxynitrided samples. It has been found that the positioning of O-Si-N bonds slightly inner from the interface leads to higher Id in NO-samples than N/sub 2/O-samples. This improvement of Id takes place through two mechanisms. One is less surface roughness scattering due to smoother interface and the other is less Coulomb scattering probability due to remote interaction with inversion carriers.

Keywords

MOSFET; carrier mobility; interface structure; inversion layers; nitridation; semiconductor-insulator boundaries; surface scattering; Coulomb scattering; N/sub 2/O; NO; Si-SiON; Si/oxynitride gate interface; atomic configuration; bonding; drain current; effective normal field; inversion layer mobility; scaled n-MOSFET; surface roughness scattering; Acoustic scattering; Capacitive sensors; Chemicals; Dielectrics; MOSFET circuits; Morphology; Optical scattering; Phonons; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746424

Filename

746424